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GaN Wafer

PAM-XIAMEN specializes in GaN-based ultra high brightness blue and green light emitting diodes (LED)

and laser diodes (LD),also offer Gallium Nitride free-standing wafer and GaN Templates(GaN-on-sapphire).

Here shows detail specification:

Download "GaN Wafer Specification" here

GaN on Al2O3-2” epi wafer Specification(LED Epiwafer)

White 445460 nm
Blue465475 nm
Green510530 nm
1. Growth Technique - MOCVD
2. Diameter: 50.8mm
3. Substrate material: Patterned Sapphire Substrate(Al2O3)
4. Pattern size: 3X2X1.5μm
5. Structure:
Structure layers
Thickness(μm)
p-GaN
0.2
p-AlGaN
0.03
InGaN/GaN(active area)
0.2
n-GaN
2.5
u- GaN
2
Al2O3 (Substrate)
430
6.Parameters to make chips:
Item
Color
Chip Size
Characteristics
Appearance
Application
 
 
 
 
 
Lighting
 
 
 
Vf = 2.8~3.4V
 
LCD backlight
PAM1023A01
Blue
10mil x 23mil
Po = 18~25mW
Mobile appliances
 
 
 
Wd = 450~460nm
Consumer electronic
 
 
 
Vf = 2.8~3.4V
 
General lighting
PAM454501
Blue
45mil x 45mil
Po = 250~300mW
LCD backlight
 
 
 
Wd = 450~460nm
Outdoor display
*If you need to know more detail information of Blue LED Chip, please contact with our sales departments.
 
*We also offer blue LED wafer on 4 inch sapphire substrate(it is patterned sapphire), wavelength:450-460nm.
 
7.Application:
  Lighting
  LCD back light
  Mobile appliances
 Consumer electronic
 
2" GaN Template
Item
PAM-GaNT-N
PAM-GaNT-SI
Conduction Type
N-type
Semi-insulating
Size
2"(50mm) dia.
Thickness
20um,30um
30um,90um
Orientation
C-axis(0001)+/-1°
Resistivity(300K)
<0.05Ω·cm
>1x10^6Ω·cm
Dislocation Density
<1x10^8cm²
Substrate Structure
Thick GaN on Sapphire(0001)
Surface Finish
Double Side Polished,epi-ready
Usable Area
90 %
Item
PAM-GaN50-N
PAM-GaN50-SI
Conduction Type
N-type
Semi-insulating
Size
2"(50mm) dia.
Thickness
230+/-20um, 280+/-20um
Orientation
C-axis(0001)+/-1°
Resistivity(300K)
<0.05Ω·cm
>1x10^6Ω·cm
Dislocation Density
<5x10^5cm²
Marco Defect Density
<5cm²
Surface Finish
Double Side Polished,RMS<2nm,N-Face RMS<1μm,epi-ready
Usable Area
90 %
10mm*10.5mm,GaN Free-standing Wafer
Item
PAM-GaN50-N
PAM-GaN50-SI
Conduction Type
N-type
Semi-insulating
Size
10mmx10.5mm
Thickness
230+/-20um, 280+/-20um
Orientation
C-axis(0001)+/-1°
Resistivity(300K)
<0.05Ω·cm
>1x10^6Ω·cm
Dislocation Density
<5x10^5cm²
Marco Defect Density
<5cm² or 5-10cm²
<5cm²
Surface Finish
Double Side Polished,RMS<2nm,N-Face RMS<1μm,epi-ready
Usable Area
90 %
*We also offer dia.45mm, dia 1", and 5mm*5mm,GaN Free-standing Wafer.
 
*We offer GaN free-standing LED grade and LD grade both.   
 
* 5*5mm,10*10mm or custom size, GaN on sapphire,(0001), n type Si doped or undoped, 3-5um are available.

 *For more information of GaN substrate, please see:Properties of GaN substrate

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