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AlN Substrate

What we provide:
 
We offer single crystalline AlN substrates on c-plane sapphire template,which is also called AlN wafer or AlN template,for UV LEDs, semiconductor devices and AlGaN epitaxial growth.Our epi-ready, C-plane AlN substrates have good XRD FWHM or dislocation density. The available thickness is from 30nm to 5um.Our single crystal Aluminum Nitride substrates with low dislocation has widely application:including UV LED,detectors, IR seekers windows, epitaxial growth of III-nitrides,Laser, RF transistors and other semiconductor device.
 
Specification of AlN substrate
2”AlN Epitaxy on Sapphire Templates
Item
PAM-AlNT-SI
Conduction Type
semi-insulating
Diameter
Ф 50.8mm ± 1mm
Thickness:
(30nm-5um)+/- 10%
Substrate:
 sapphire
Orientation :
C-axis(0001)+/-1O
Orientation Flat
A-plane
XRD FWHM of (0002)
<200 arcsec.
Useable Surface Area
≥90%
 Polishing:
Single side Polished,epi-ready
 
Properties of AlN substrate
PROPERTY / MATERIAL
Cubic (Beta) AlN
Hexagonal (Alpha) AlN
.
.
.
Structure
Zinc Blende
Wurzite
Space Group
F bar4 3m
C46v ( = P63mc)
Stability
Meta-stable
Stable
Lattice Parameter(s) at 300K
0.436 nm
a0=0.3111 nm
c0 = 0.4978 nm
Density at 300K
3.285 g.cm-3
3.255 g.cm-3
Elastic Moduli at 300 K
. . .
. . .
Linear Therm. Expansion Coeff.
. . .
Along a0: 5.3x10-6 K-1
at 300 K
Along c0: 4.2x10-6 K-1
Calculated Spontaneous Polarisations
Not Applicable
– 0.081 C m-2 
Bernardini et al 1997
Bernardini & Fiorentini 1999 
Calculated Piezo-electric Coefficients
Not Applicable
e33 = + 1.46 C m-2
e31 = – 0.60 C m-2 
Bernardini et al 1997
Bernardini & Fiorentini 1999
Phonon Energies
. . .
. . .
 
. . .
Units: Wcm-1K-1
 
 .
 
 .
Thermal Conductivity
Tansley et al 1997b 
near 300K
 .
 
3.0 to 3.3
 
for thick, free-standing AlN 
 
Florescu et al, 2001 
Melting Point
. . .
. . .. K
Dielectric Constant
. . .
Mean = 9.14
at Lowish Frequency
Refractive Index
. . .
2.15±0.05 at 3eV 
Tansley et al 1997b 
Nature of Energy Gap Eg
Direct
Direct
Energy Gap Eg at 300 K
. . . eV
6.2 eV 
Yoshida et al 198
Vurgaftman et al (2001)
Energy Gap Eg at 5 K
. . .
6.28 eV 
Vurgaftman et al (2001)
Intrinsic Carrier Conc. at 300 K
. . .
. . .
Ionisation Energy of . . . Donor
. . . .
. . .
Electron Mobility at 300 K
. . .
. . .
for n= . .
Electron Mobility at 77 K
. . . .
. . .
for n= . .
Ionisation Energy of . . . Acceptor
. . .
. . .
Hole Mobility at 300 K
. . . .
. . . .
for p= . .
Hole Mobility at 77 K
. . . .
. . .
for p=. . .
Cubic (Beta) AlN 
Hexagonal (Alpha) AlN 

 

 

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