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Silicon Carbide Wafers(SiC wafer)

PWAM offers semiconductor materials, especially for SiC wafer, SiC substate of polytype 4H and 6H in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology, established a production line to manufacturer SiC substrate and SiC wafer. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab, we are devoted to continuously improve the quality of SiC wafer, currently substates and develop large size substrates. Our responsibility is to produce the best silicon wafer.

Here shows detail specification:

Download "wafer specification" here
SILICON CARBIDE MATERIAL PROPERTIES
Polytype
Single Crystal 4H
Single Crystal 6H
Lattice Parameters
a=3.076 Å
a=3.073 Å
c=10.053 Å
c=15.117 Å
Stacking Sequence
ABCB
ABCACB
Band-gap
3.26 eV
3.03 eV
Density
3.21 · 103 kg/m3
3.21 · 103 kg/m3
Therm. Expansion Coefficient
4-5×10-6/K
4-5×10-6/K
Refraction Index
no = 2.719
no = 2.707
ne = 2.777
ne = 2.755
Dielectric Constant
9.6
9.66
Thermal Conductivity
490 W/mK
490 W/mK
Break-Down Electrical Field
2 – 4 · 108 V/m
2 – 4 · 108 V/m
Saturation Drift Velocity
2.0 · 105 m/s
2.0 · 105 m/s
Electron Mobility
800 cm2/V·S
400 cm2/V·S
hole Mobility
115 cm2/V·S
90 cm2/V·S
Mohs Hardness
~9
~9
 
6H N-TYPE SIC, 2″WAFER SPECIFICATION
SUBSTRATE PROPERTY
S6H-51-N-PWAM-250 S6H-51-N-PWAM-330 S6H-51-N-PWAM-430
Description
Production Grade 6H SiC Substrate
Polytype
6H
Diameter
(50.8 ± 0.38) mm
Thickness
(250 ± 25) μm      (330 ± 25) μm     (430 ± 25) μm
Carrier Type
n-type
Dopant
Nitrogen
LResistivity (RT)
0.02 ~ 0.1 Ω·cm
Surface Roughness
< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM
A<30 arcsec                   B/C/D <50 arcsec 
Micropipe Density
A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2
Surface Orientation
 
On axis
<0001>± 0.5°
Off axis
3.5° toward <11-20>± 0.5°
Primary flat orientation
Parallel {1-100} ± 5°
Primary flat length
(16 ± 1.7) mm
Secondary flat orientation
Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length
(8 ± 1.7) mm
Surface Finish
Single or double face polished
Packaging
Single wafer box or multi wafer box
Usable area
≥ 90 %
Edge exclusion
1 mm
 
6H SEMI-INSULATING SIC, 2″WAFER SPECIFICATION
SUBSTRATE PROPERTY
S6H-51-SI-PWAM-250 S6H-51-SI-PWAM-330 S6H-51-SI-PWAM-430
Description
Production Grade 6H SEMI Substrate
Polytype
6H
Diameter
(50.8 ± 0.38) mm
Thickness
(250 ± 25) μm     (330 ± 25) μm     (430 ± 25) μm
Resistivity (RT)
(90% >1E5 Ω·cm
Surface Roughness
< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM
A<30 arcsec                   B/C/D <50 arcsec 
Micropipe Density
A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2
Surface Orientation
 
On axis
<0001>± 0.5°
Off axis
3.5° toward <11-20>± 0.5°
Primary flat orientation
Parallel {1-100} ± 5°
Primary flat length
(16 ± 1.7) mm
Secondary flat orientation
Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length
(8 ± 1.7) mm
Surface Finish
Single or double face polished
Packaging
Single wafer box or multi wafer box
Usable area
≥ 90 %
Edge exclusion
1 mm
6H N-TYPE SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm                   SiC wafer
6H N-TYPE SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm
 
4H N-TYPE SIC, 2″WAFER SPECIFICATION
SUBSTRATE PROPERTY
S4H-51-N-PWAM-330     S4H-51-N-PWAM-430
Description
Production Grade     4H SiC Substrate
Polytype
4H
Diameter
(50.8 ± 0.38) mm
Thickness
(250 ± 25) μm     (330 ± 25) μm     (430 ± 25) μm
Carrier Type
n-type
Dopant
Nitrogen
Resistivity (RT)
0.012 - 0.0028 Ω·cm
Surface Roughness
< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM
A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density
A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2
Surface Orientation
 
On axis
<0001>± 0.5°
Off axis
4°or 8° toward <11-20>± 0.5°
Primary flat orientation
Parallel {1-100} ± 5°
Primary flat length
(16 ± 1.7) mm
Secondary flat orientation
Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length
(8 ± 1.7) mm
Surface Finish
Single or double face polished
Packaging
Single wafer box or multi wafer box
Usable area
≥ 90 %
Edge exclusion
1 mm
 
4H N-TYPE SIC, 3″WAFER SPECIFICATION
SUBSTRATE PROPERTY
S4H-76-N-PWAM-330     S4H-76-N-PWAM-430
Description
Production Grade     4H SiC Substrate
Polytype
4H
Diameter
(76.2 ± 0.38) mm
Thickness
(350 ± 25) μm     (430 ± 25) μm
Carrier Type
n-type
Dopant
Nitrogen
Resistivity (RT)
0.015 - 0.028Ω·cm
Surface Roughness
< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM
A<30 arcsec                   B/C/D <50 arcsec 
Micropipe Density
A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2
TTV/Bow /Warp
25μm
Surface Orientation
 
On axis
<0001>± 0.5°
Off axis
4°or 8° toward <11-20>± 0.5°
Primary flat orientation
<11-20>±5.0°
Primary flat length
22.22 mm±3.17mm
Secondary flat orientation
Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length
11 ± 1.7 mm
Surface Finish
Single or double face polished
Packaging
Single wafer box or multi wafer box
Scratch
None
Usable area
≥ 90 %
Edge exclusion
2mm
4H N-TYPE SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm
4H N-TYPE SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm
We are the industry-leading SiC wafer manufacturers, Committed to producing high quality single crystal SiC wafer.
 *We also provide SiC substrate with titanium coating for growth AlGaN/GaN HEMT structure
 
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