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GaN substrate

What we provide:
 
Item
undoped N-
Si doped N+
Semi-insulating
P+
Freestanding GaN substrate
yes
yes
yes
 
GaN on sapphire
yes
yes
yes
yes
InGaN on sapphire
 
yes
***
 
AlN on sapphire
 
 
yes
 
LED wafer
(p+GaN/MOW/N+GaN/N-AlGaN/N+GaN/N-GaN/sapphire)
 
Freestanding GaN substrate/GaN on sapphire/LED wafer:
 
For specifications of Freestanding GaN substrate/GaN on sapphire/LED wafer, please view Gallium Nitride wafer:
 
InGaN on Sapphire:
 
For specification of InGaN on sapphire template, pleas view InGaN substrate:
 
AlN on Sapphire:
 
For specification of AlN on sapphire template, pleas view AlN substrate:
 
AlGaN/GaN on Sapphire
 
For AlGaN/GaN on sapphire template, please view AlGaN/GaN:
 
Lattice constant of GaN substrate
 
Lattice parameters of gallium nitride were measured using high‐resolution x‐ray diffraction
GaN,Wurtzite sructure. The lattice constants a vs. temperature.
GaN,Wurtzite sructure. The lattice constants c vs. temperature
 
Properties of GaN substrate
PROPERTY / MATERIAL
Cubic (Beta) GaN
Hexagonal (Alpha) GaN
.
.
.
Structure
Zinc Blende
Wurzite
Space Group
F bar4 3m
C46v ( = P63mc)
Stability
Meta-stable
Stable
Lattice Parameter(s) at 300K
0.450 nm
a0 = 0.3189 nm
c0 = 0.5185 nm
Density at 300K
6.10 g.cm-3
6.095 g.cm-3
Elastic Moduli at 300 K
. . .
. . .
Linear Thermal Expansion Coeff.
. . .
Along a0: 5.59x10-6 K-1
at 300 K
Along c0: 7.75x10-6 K-1
Calculated Spontaneous Polarisations
Not Applicable
– 0.029 C m-2 
Bernardini et al 1997
Bernardini & Fiorentini 1999 
Calculated Piezo-electric Coefficients
Not Applicable
e33 = + 0.73 C m-2
e31 = – 0.49 C m-2 
Bernardini et al 1997
Bernardini & Fiorentini 1999 
 
 
A1(TO): 66.1 meV
 
 
E1(TO): 69.6 meV
Phonon Energies
TO: 68.9 meV 
E2: 70.7 meV
 
LO: 91.8 meV 
A1(LO): 91.2 meV
 
 
E1(LO): 92.1 meV
Debye Temperature
 
600K (estimated)
Slack, 1973
 
. . .
Units: Wcm-1K-1
 
 
 
1.3, 
 
Tansley et al 1997b 
 
 
 
2.2±0.2
 
for thick, free-standing GaN 
 
Vaudo et al, 2000
 
 
 
2.1 (0.5)
 
for LEO material
 
where few (many) dislocations 
Thermal Conductivity
Florescu et al, 2000, 2001 
near 300K
 
 
circa 1.7 to 1.0
 
for n=1x1017 to 4x1018cm-3
 
in HVPE material 
 
Florescu, Molnar et al, 2000 
 
 
 
2.3 ± 0.1
 
in Fe-doped HVPE material
 
of ca. 2 x108 ohm-cm,
 
& dislocation density ca. 105 cm-2
 
(effects of T & dislocation density also given).
 
Mion et al, 2006a, 2006b 
 
 
Melting Point
. . .
. . .
Dielectric Constant
. . .
Along a0: 10.4
at Low/Lowish Frequency
Along c0: 9.5
Refractive Index
2.9 at 3eV 
2.67 at 3.38eV 
Tansley et al 1997b 
Tansley et al 1997b 
Nature of Energy Gap Eg
Direct
Direct
Energy Gap Eg at 1237K
 
2.73 eV 
Ching-Hua Su et al, 2002 
Energy Gap Eg at 293-1237 K
 
3.556 - 9.9x10-4T2 / (T+600) eV 
        Ching-Hua Su et al, 2002 
Energy Gap Eg at 300 K
3.23 eV 
3.44 eV 
Ramirez-Flores et al 1994 
Monemar 1974 
.
.
3.25 eV 
3.45 eV 
Logothetidis et al 1994 
Koide et al 1987
 
.
 
3.457 eV 
 
Ching-Hua Su et al, 2002 
Energy Gap Eg at ca. 0 K
3.30 eV 
3.50 eV 
Ramirez-Flores et al1994
Dingle et al 1971
Ploog et al 1995 
Monemar 1974 
Intrinsic Carrier Conc. at 300 K
. . .
. . .
Ionisation Energy of . . . Donor
. . . .
. . . .
Electron effective mass me* / m0
. . .
0.22
Moore et al, 2002 
Electron Mobility at 300 K
. . .
.
for n = 1x1017 cm-3:
ca. 500 cm2V-1s-1
for n = 1x1018 cm-3:
ca. 240 cm2V-1s-1
for n = 1x1019 cm-3:
ca. 150 cm2V-1s-1 
 
 
 
Rode & Gaskill, 1995
 
Tansley et al 1997a 
Electron Mobility at 77 K
. . . .
. . . .
for n = . .
Ionisation Energy of Acceptors
. . .
Mg: 160 meV 
Amano et al 1990 
 
Mg: 171 meV 
Zolper et al 1995 
 
Ca: 169 meV 
Zolper et al 1996 
Hole Hall Mobility at 300 K
. . .
. . . .
for p= . . .
Hole Hall Mobility at 77 K
. . . .
. . .
for p= . . .
Cubic (Beta) GaN 
Hexagonal (Alpha) GaN 

Application of GaN substrate

Gallium nitride (GaN), with a direct band gap of 3.4 eV, is a promising material in the development of short-wavelength light emitting devices. Other optical device applications for GaN include semiconductor lasers and optical detectors.

 

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