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Field emission and optical studies of photoelectron transport in GaAs crystal

The photosensitivity of the field emission current from a GaAs crystal with an atomically clean emitting surface has been studied. Measurements of the optical and emission characteristics showed that the quantum yield can reach a magnitude considerably above 100%. A physical mechanism that could possibly lead to this abnormally large quantum yield (for a semiconductor field emitter) is discussed. The feasibility of using a GaAs field emitter as an efficient detection structure is demonstrated. 

 

 

source: iopscience

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