Home > News > P Type GaAs Wafer Specs

P Type GaAs Wafer Specs

We offer p type GaAs wafer for industry and researchers,for specification:
 
2”GaAs Wafer Specification—P type
 
 
Conduct Type
Semi-conducting
Crystal Growth Method
VGF
Type
P
Dopant Zn
Zn
Diameter
50.8±0.4mm
Orientation
(100) 0°±0.5°
Primary Flat
EJ [0`1`1] ±0.5°
Primary Flat Length
16±1
Secondary Flat
EJ [0`1 1] ±0.5°
Secondary Flat Length
7±1
Carrier Concentration
(1-5)E19/cm3
Resistivity
N/A
Mobility
N/A
EPD
5000 /cm2
Thickness
350±25m
Polishing
 P/E
Package
Single wafer box Epi-Ready
 
Also you can see below PDF file:
 
 
The specification is only for your reference, if you need US standard wafer with US flats, it is also available. if you need double side polished, it is also available.
 
Source:PAM-XIAMEN
 
If you need more information about P Type GaAs Wafer Specs, please visit:http://www.qualitymaterial.net/ or send us email at [email protected]