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CdZnTe (CZT) Wafer

>CdZnTe (CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray and γ-ray detection, laser optical modulation, high-performance solar cells and other high-tech fields.

From 2001,PWAM offers commercial CZT wafers with high quality and very competitive price. We also can offer CZT crystals with contacts. Regulaly contacts of anodes and cathode are both deposited by Au, but we can use Al to the deposit the contacts as required.And we offer wafer custom size.

Zn doped CdTe, also called CZT,composition:Cd(1-x)Zn(x)Te,x=0.1( if for substrate epitaxial growth, "x" should be changed)

N-type
both sides polished
Surface roughness:<2 nm
Resistivity:  >1×10^10 Ω• cm
FWHM@59.5 keV<7%
Density:5.76g/cm3.
Mu-tau value >10-3 cm2/V
Monocrystal
EPD:<10^5 cm-2
Package: in 100 class,clean plastic bag
 
CZT crystal is grown by special Bridgman technique up to 30*30mm. Compared with CdTe, it has a larger band gap and excellent IR transmission. It is widely used as X-ray and gama-ray detectors, and substrate for epitaxial film.
 

We also provide Polycrystalline Cd0.9Zn0.1Te in the form of ingot pieces

Detailed SPECIFICATIONS

Chemical Composition: CZT: Cd0.9Zn0.1Te

Purity 99.9999 % min

Form: Ingot pieces

Quantity 2000 g or custom

We also offer HgCdTe as follows:

Mercury Cadmium Telluride
Item  Specifications
Name  Mercury Cadmium Telluride
Formula  Hg1-xCdxTe
  X=0.16~0.42
Conductivity Type  n-type (p-type on request)
Dimensions  15.5 ± 0.6 mm or 15 x 20 mm
Thickness  500 ± 100 μm
Carrier Concentration (CC)  5E12~1E15
Mobility (Mu) @77K  >= 5E3
Flatness  ± 20 μm
Defects  To the naked eye minimal precipitates/pits, no holes, no cracks
Surface Finish  Double sides polished

 

For detailed quotes and special requirements please contact our sales office.

 

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