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GaAs (Gallium Arsenide) Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for wafer cleaning and packaging.  Our GaAs wafer include  2~6 inch  ingot/wafers for LED,LD and Microelectronics applications.

We are always dedicated to improve the quality of currently substates and develop large size substrates.

Here shows detail specification:

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GaAs Wafers for LED Applications
Item
Specifications
Remarks
Conduction Type
SC/n-type
SC/p-type with Zn dope Available
Growth Method
VGF
 
Dopant
Silicon
Zn available
Wafer Diamter
2, 3 & 4 inch
Ingot or as-cut availalbe
Crystal Orientation

(100)2°/6°/15° off (110)  

Other misorientation available
OF
EJ or US
 
Carrier Concentration
(0.4~2.5)E18/cm3
 
Resistivity at RT
(1.5~9)E-3 Ohm.cm
 
Mobility
1500~3000cm2/V.sec
 
Etch Pit Density
<5000/cm2
 
Laser Marking
upon request
 
Surface Finish
P/E or P/P
 
Thickness
220~450um
 
Epitaxy Ready
Yes
 
Package
Single wafer container or cassette
 
 
GaAs Wafers for LD Applications
Item Specifications Remarks
Conduction Type SC/n-type  
Growth Method VGF  
Dopant Silicon  
Wafer Diamter 2, 3 & 4 inch Ingot or as-cut available
Crystal Orientation

(100)2°/6°/15° off (110)   

Other misorientation available
OF EJ or US  
Carrier Concentration (0.4~2.5)E18/cm3  
Resistivity at RT (1.5~9)E-3 Ohm.cm  
Mobility 1500~3000 cm2/V.sec  
Etch Pit Density <500/cm2  
Laser Marking upon request  
Surface Finish P/E or P/P  
Thickness 220~350um  
Epitaxy Ready Yes  
Package Single wafer container or cassette  
 
GaAs Wafers,Semi-insulating for Microelectronics Applications
Item
Specifications
Remarks
Conduction Type
Insulating
 
Growth Method
VGF
 
Dopant
Undoped
 
Wafer Diamter
2, 3, 4 & 6 inch
Ingot available
Crystal Orientation
(100)+/- 0.5°
 
OF
EJ, US or notch
 
Carrier Concentration
n/a
 
Resistivity at RT
>1E7 Ohm.cm
 
Mobility
>5000 cm2/V.sec
 
Etch Pit Density
<8000 /cm2
 
Laser Marking
upon request
 
Surface Finish
P/P
 
Thickness
350~675um
 
Epitaxy Ready
Yes
 
Package
Single wafer container or cassette
 
 
For detial specification of p type GaAs wafer, please see P Type GaAs Wafer Specs.
 
For detial specification of special (111) GaAs wafer, please see (111) GaAs Wafer Specs.
 
For GaAs epi wafer growth, please see:GaAs epiwafer and LT-GaAs.
 

 

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